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| www..com SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.01 @ VGS = 4.5 V ID (A) 75a 70 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP75N03-07 SUB75N03-07 N-Channel MOSFET DS Top View S www..com Parameter Symbol VDS VGS TC = 25_C TC = 100_C ID IDM IAR L = 0.1 mH TC = 25_C EAR PD TJ, Tstg ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit 30 "20 75a 64 A 240 75 280 120c -55 to 175 mJ W _C V Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70794 S-000652--Rev. D, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.25 Symbol Limit 40 Unit _C/W 2-1 www. .com www..com SUP/SUB75N03-07 Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 20 120 0.006 0.007 0.011 0.015 0.01 S W 30 V 1 2 "100 1 50 150 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Ciss 5600 VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 1100 450 70 18 10 18 VDD = 15 V, RL = 0.2 W , ID ] 75 A, VGEN = 10 V, RG = 2.5 W 12 60 22 30 20 ns 120 40 130 nC C pF F Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec www..com Crss Qg Qgs Qgd td(on) tr td(off) tf VDS = 15 V, VGS = 10 V, ID = 75 A V V Coss Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Is ISM VSD trr IF = 75 A, VGS = 0 V IF = 75 A, di/dt = 100 A/ms 1.2 55 75 A 200 1.5 100 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70794 S-000652--Rev. D, 27-Mar-00 www. .com www..com SUP/SUB75N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 VGS = 10, 9, 8, 7, 6 V 5V 150 100 Transfer Characteristics 200 I D - Drain Current (A) 80 I D - Drain Current (A) 60 100 4V 40 TC = 125_C 20 25_C -55_C 0 50 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 120 TC = -55_C r DS(on) - On-Resistance ( W ) 100 g fs - Transconductance (S) 25_C 0.012 0.015 On-Resistance vs. Drain Current 80 www..com VGS = 4.5 V 125_C 0.009 VGS = 10 V 0.006 0.003 60 40 20 0 0 10 20 30 40 50 0 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 8000 20 Gate Charge Ciss 6000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 16 VGS = 10 V ID = 75 A 12 4000 8 2000 Crss 0 0 6 12 Coss 4 0 18 24 30 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Document Number: 70794 S-000652--Rev. D, 27-Mar-00 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 www. .com www..com SUP/SUB75N03-07 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 10 TJ = 25_C TJ = 150_C 100 Source-Drain Diode Forward Voltage 1.5 1.0 1 0.5 0 -50 0.1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 80 500 10 ms 100 ms Safe Operating Area 60 I D - Drain Current (A) I D - Drain Current (A) www..com 100 10 TC = 25_C Single Pulse Limited by rDS(on) 40 1 ms 20 10 ms 100 ms dc 0 0 25 50 75 100 125 150 175 1 0.1 1 10 100 TA - Ambient Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70794 S-000652--Rev. D, 27-Mar-00 2-4 www. .com www..com Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. www..com Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 www. .com |
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